Kingston 8GB DDR3 1600Mhz DIMM Memory
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PC3-12800, CL11, 240-Pin
KVR16N11/88GB 2Rx8 1G x 64-Bit PC3-12800CL11 240-Pin DIMM DESCRIPTION:This document describes ValueRAM's 1G x 64-bit (8GB) DDR3-1600 CL11 SDRAM (Synchronous DRAM) 2Rx8, memorymodule, based on sixteen 512M x 8-bit FBGA components. TheSPD is programmed to JEDEC standard latency DDR3-1600timing of 11-11-11 at 1.5V. This 240-pin DIMM uses goldcontact fingers. The electrical and mechanical specificationsare as follows: FEATURES:• JEDEC standard 1.5V (1.425V ~1.575V) Power Supply• VDDQ = 1.5V (1.425V ~ 1.575V)• 800MHz fCK for 1600Mb/sec/pin• 8 independent internal bank• Programmable CAS Latency: 11, 10, 9, 8, 7, 6• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock• 8-bit pre-fetch• Burst Length: 8 (Interleave without any limit, sequential withstarting address “000” only), 4 with tCCD = 4 which does notallow seamless read or write [either on the fly using A12 orMRS]• Bi-directional Differential Data Strobe• Internal(self) calibration : Internal self calibration through ZQpin (RZQ : 240 ohm ± 1%)• On Die Termination using ODT pin• Average Refresh Period 7.8us at lower than TCASE 85°C,3.9us at 85°C < TCASE < 95°C• Asynchronous Reset• PCB : Height 1.180” (30.00mm), double sided component
CAS latency Column Address Strobe (CAS) latency, or CL, is the delay time between the moment a memory controller tells the memory module to access a particular memory column on a RAM module, and the moment the data from the given array location is available on the module's output pins. In general, the lower the CAS latency, the better.
Memory layout (modules x size) How the overall memory of the product is put together, defined by the number of modules and the size.
1 x 8 GB
Buffered memory type
ECC ECC means Error Correction Code, and it is memory that is able to detect and correct some memory errors without user intervention.
Memory bus Hardware and software that connects the main memory to the memory controller in computer systems. Originally, general-purpose buses like VMEbus and the S-100 bus were used, but to reduce latency, modern memory buses are designed to connect directly to DRAM chips, and thus are designed by chip standards bodies such as JEDEC.
1024M x 64
Number of pins
Bus clock rate
|Product Condition||Brand New/Unused|
|Memory Form Factor||DIMM|
|Stock Availability||Available for Shipping|