Kingston 4GB DDR3-1600 SODIMM Memory
1600MHz Low voltage DDR3 Non-ECC CL11 SODIMM (1.35V)
DESCRIPTION This document describes ValueRAM's 512M x 64-bit (4GB)DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 1Rx8, lowvoltage, memory module, based on eight 512M x 8-bit FBGAcomponents. The SPD is programmed to JEDEC standardlatency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V. This204-pin SODIMM uses gold contact fingers. The electrical andmechanical specifications are as follows: FEATURES• JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~1.575V) Power Supply• VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)• 800MHz fCK for 1600Mb/sec/pin• 8 independent internal bank• Programmable CAS Latency: 11, 10, 9, 8, 7, 6• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock• 8-bit pre-fetch• Burst Length: 8 (Interleave without any limit, sequential withstarting address “000” only), 4 with tCCD = 4 which does notallow seamless read or write [either on the fly using A12 orMRS]• Bi-directional Differential Data Strobe• Internal(self) calibration : Internal self calibration through ZQpin (RZQ : 240 ohm ± 1%)• On Die Termination using ODT pin• Average Refresh Period 7.8us at lower than TCASE 85°C,3.9us at 85°C < TCASE < 95°C• Asynchronous Reset• PCB: Height 1.18” (30mm), double sided component
CAS latency Column Address Strobe (CAS) latency, or CL, is the delay time between the moment a memory controller tells the memory module to access a particular memory column on a RAM module, and the moment the data from the given array location is available on the module's output pins. In general, the lower the CAS latency, the better.
Memory layout (modules x size) How the overall memory of the product is put together, defined by the number of modules and the size.
1 x 4 GB
Buffered memory type
ECC ECC means Error Correction Code, and it is memory that is able to detect and correct some memory errors without user intervention.
Memory bus Hardware and software that connects the main memory to the memory controller in computer systems. Originally, general-purpose buses like VMEbus and the S-100 bus were used, but to reduce latency, modern memory buses are designed to connect directly to DRAM chips, and thus are designed by chip standards bodies such as JEDEC.
512M X 64
Row cycle time
Refresh row cycle time
Row active time
Operating temperature (T-T) The minimum and maximum temperatures at which the product can be safely operated.
0 - 85 °C
Weight & dimensions
Bus clock rate
|Product Condition||Brand New/Unused|
|Memory Form Factor||SODIMM|
|Stock Availability||Available for Shipping|