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Kingston 4GB DDR3-1600 SODIMM Memory

Item No:
217049
MPN:
KVR16LS11/4
$49
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1600MHz Low voltage DDR3 Non-ECC CL11 SODIMM (1.35V)
DESCRIPTION This document describes ValueRAM's 512M x 64-bit (4GB)DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 1Rx8, lowvoltage, memory module, based on eight 512M x 8-bit FBGAcomponents. The SPD is programmed to JEDEC standardlatency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V. This204-pin SODIMM uses gold contact fingers. The electrical andmechanical specifications are as follows: FEATURES• JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~1.575V) Power Supply• VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)• 800MHz fCK for 1600Mb/sec/pin• 8 independent internal bank• Programmable CAS Latency: 11, 10, 9, 8, 7, 6• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock• 8-bit pre-fetch• Burst Length: 8 (Interleave without any limit, sequential withstarting address “000” only), 4 with tCCD = 4 which does notallow seamless read or write [either on the fly using A12 orMRS]• Bi-directional Differential Data Strobe• Internal(self) calibration : Internal self calibration through ZQpin (RZQ : 240 ohm ± 1%)• On Die Termination using ODT pin• Average Refresh Period 7.8us at lower than TCASE 85°C,3.9us at 85°C < TCASE < 95°C• Asynchronous Reset• PCB: Height 1.18” (30mm), double sided component

Features

CAS latency Column Address Strobe (CAS) latency, or CL, is the delay time between the moment a memory controller tells the memory module to access a particular memory column on a RAM module, and the moment the data from the given array location is available on the module's output pins. In general, the lower the CAS latency, the better.
11
Internal memory A computer's memory which is directly accessible to the CPU.
4 GB
Memory layout (modules x size) How the overall memory of the product is put together, defined by the number of modules and the size.
1 x 4 GB
Internal memory type The type of internal memory such as RAM, GDDR5.
DDR3L
Memory clock speed The frequency at which the memory (e.g. RAM) runs.
1600 MHz
Component for What this product is used as a part of (component for).
Notebook
Memory form factor Design of the memory e.g. 240-pin DIMM, SO-DIMM.
204-pin SO-DIMM
Buffered memory type
Unregistered (unbuffered)
ECC ECC means Error Correction Code, and it is memory that is able to detect and correct some memory errors without user intervention.
Memory bus Hardware and software that connects the main memory to the memory controller in computer systems. Originally, general-purpose buses like VMEbus and the S-100 bus were used, but to reduce latency, modern memory buses are designed to connect directly to DRAM chips, and thus are designed by chip standards bodies such as JEDEC.
64 bit
Memory voltage The voltage (V) of the memory in the device.
1.35,1.5 V
Module configuration
512M X 64
Row cycle time
48.125 ns
Refresh row cycle time
260 ns
Row active time
35 ns
Lead plating
Gold

Operational conditions

Operating temperature (T-T) The minimum and maximum temperatures at which the product can be safely operated.
0 - 85 °C
Storage temperature (T-T) The minimum and maximum temperatures at which the product can be safely stored.
-55 - 100 °C

Weight & dimensions

Width The measurement or extent of something from side to side.
67.6 mm
Height The measurement of the product from head to foot or from base to top.
30 mm

Other features

Chips organisation
X8
Bus clock rate
1600 MHz
Error indication
Rack mounting The type of mounting that can position devices in a shelving system (rack).
204-pin SODIMM
Memory layout Describes how memory is plugged on the motherboard
1 x 4096 MB
Internal memory The amount of memory, usually measured in bytes (e.g. MB, GB), which is installed in the system's hardware.
4096 MB
Specifications
SKU 217049
MPN KVR16LS11/4
Brand Kingston
Product Condition Brand New/Unused
Memory Type DDR3
Memory Form Factor SODIMM
Stock Availability Available for Shipping